Integrated circuit device

ABSTRACT

Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

BACKGROUND

An image sensor device includes a pixel array for detecting light andrecording intensity of the detected light. For example, the pixel arrayresponds to the light by accumulating a charge. The higher the intensityof the light is, the higher the charge is accumulated in the pixelarray. The accumulated charge is used to provide image information foruse in a suitable application, such as a digital camera. Some imagesensor devices use phase difference detection pixels to performautofocus (AF). Phase difference detection works by disposing focusdetection pixels among image sensing pixels. The signals output from thefocus detection pixels are used to detect phase differences betweensignals generated by different focus detection pixels. The detectedphase differences can be used to perform AF.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view showing an integrated circuit device inaccordance with some embodiments.

FIG. 2 is a schematic view showing an integrated circuit device inaccordance with some embodiments.

FIG. 3 is a schematic view showing an integrated circuit device inaccordance with some embodiments.

FIG. 4 is a schematic view showing an integrated circuit device inaccordance with some embodiments.

FIG. 5 is a schematic view showing an integrated circuit device inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a second feature over or on a first feature in the description thatfollows may include embodiments in which the second and first featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the second and first features,such that the second and first features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “top,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 is a schematic view showing an integrated circuit device inaccordance with some embodiments.

Referring to FIG. 1, in some embodiments, an integrated circuit device100 includes a plurality of image sensing pixels 110, at least one focusdetection pixel pair 120, color filters 150, and lenses 160. The drawingis illustrated in a simplified manner.

In some embodiments, the image sensing pixels 110 and the focusdetection pixel pair 120 are, for example, two-dimensionally arranged,and the focus detection pixel pair 120 is disposed among the imagesensing pixels 110. The focus detection pixel pair 120 includes a firstfocus detection pixel 122 and a second focus detection pixel 128. Insome embodiments, the first focus detection pixel 122 and the secondfocus detection pixel 128 may be disposed adjacent to each other, forexample. In alternative embodiments, the first focus detection pixel 122and the second focus detection pixel 128 may be separated from eachother by at least one image sensing pixel 110.

The first focus detection pixel 122 includes a first photosensitive unit124 at a first side and a first photo-insensitive unit 126 at a secondside, the second focus detection pixel 128 includes a secondphotosensitive unit 130 at the second side and a secondphoto-insensitive unit 132 at the first side. The first side and thesecond side are, for example, opposite to each other with respect to anoptical axis 162 of the lens 160. In some embodiments, the firstphotosensitive unit 124 and the first photo-insensitive unit 126 areopposite to each other with respect to an optical axis 162 of the lens160, and the second photosensitive unit 130 and the secondphoto-insensitive unit 132 are opposite to each other with respect to anoptical axis 162 of the lens 160. In some embodiments, one of the firstside and the second side is a right side, and the other of the firstside and the second side is a left side. In some embodiments, the firstside is, for example, a left side, and the second side is, for example,a right side.

In some embodiments, the image sensing pixel 110 and the first andsecond photosensitive units 124 and 130 of the focus detection pixelpair 120 are configured to detect an intensity (brightness) ofradiation, such as an incident light. The first photo-insensitive unit126 and the second photo-insensitive unit 132 are configured to beineffective in sensing the incident light. In some embodiments, a lightbeam L_(i) passing through the lens 160 over the first focus detectionpixel 122 is simultaneously incident into the first photosensitive unit124 and the first photo-insensitive unit 126. Similarly, the light beamL_(i) passing through the lens 160 over the second focus detection pixel128 is simultaneously incident into the second photosensitive unit 130and the second photo-insensitive unit 132. In other words, the lightbeam L_(i) passing through the lens 160 is incident into the firstphoto-insensitive unit 126 and the second photo-insensitive unit 132without being blocked, for example, by a mask. The first focus detectionpixel 122 includes the first photosensitive unit 124 at the first sideand the second focus detection pixel 128 includes the secondphotosensitive unit 130 at the second side, respectively. Therefore, thefocus detection pixel pair 120 detects first side-looking information bythe first photosensitive unit 124 and second side-looking information bythe second photosensitive unit 130 to catch a focus position, and thusthe focus detection pixel pair 120 performs phase difference autofocus.In some embodiments, one of the first side-looking information and thesecond side-looking information is right-looking information, and theother of the first side-looking information and the second side-lookinginformation is left side-looking information. In some embodiments, thefirst side-looking information is, for example, left-lookinginformation, and the second side is, for example, right-lookinginformation.

In some embodiments, a size of at least one of the first focus detectionpixel 122 and the second focus detection pixel 128 is, for example,different from a size of the image sensing pixel 110. In someembodiments, a size of at least one of the first focus detection pixel122 and the second focus detection pixel 128 is, for example, largerthan a size of the image sensing pixel 110. In some embodiments, thelenses 160 are disposed over the image sensing pixels 110, the firstfocus detection pixel 122, and the second focus detection pixel 128,respectively. In some embodiments, the color filters 150 are disposedbetween the lenses 160 and the image sensing pixels 110, the first focusdetection pixel 122, and the second focus detection pixel 128. In someembodiments, a size of the lens 160 over the first focus detection pixel122 and a size of the lens 160 over the second focus detection pixel 128are respectively larger than a size of the lens 160 over the imagesensing pixel 110. In some embodiments, a size of at least one of thefirst photosensitive unit 124, the first photo-insensitive unit 126, thesecond photosensitive unit 130, and the second photo-insensitive unit132 may be about equal to a size of the image sensing pixel 110. In someembodiments, a size of the lens 160 over the first focus detection pixel122 and a size of the lens 160 over the second focus detection pixel 128are respectively about two times a size of the lens over the imagesensing pixel 110. In some embodiments, a size of the firstphotosensitive unit 124 is about equal to a size of the firstphoto-insensitive unit 126, and a size of the second photosensitive unit130 is about equal to a size of the second photo-insensitive unit 132,for example. In some embodiments, the size of the focus detection pixel,the photosensitive unit and/or the photo-insensitive unit is a width ofthe focus detection pixel, the photosensitive unit and/or thephoto-insensitive unit, for example. In alternative embodiments, thesize of the focus detection pixel, the photosensitive unit and/or thephoto-insensitive unit may be a length, a diameter, area, or the like ofthe focus detection pixel, the photosensitive unit and/or thephoto-insensitive unit. In some embodiments, the size of the lens is adiameter of the lens, for example. In alternative embodiments, the sizeof the lens may be area or the like of the lens.

The above embodiments illustrate an example a size of at least one ofthe first focus detection pixel and the second focus detection pixel isdifferent from a size of the image sensing pixel. However, thedisclosure is not limited thereto. FIG. 2 is a schematic views showingan integrated circuit device in accordance with some embodiments. Thedrawing is illustrated in a simplified manner. In some embodiments, asize of at least one of the first focus detection pixel 122 and thesecond focus detection pixel 128 is, for example, about equal to a sizeof the image sensing pixel 110. Accordingly, a size of the lens 160 overthe first focus detection pixel 122 and a size of the lens 160 over thesecond focus detection pixel 128 are respectively, for example, aboutequal to a size of the lens 160 over the image sensing pixel 110.

FIG. 3 is a detailed schematic view showing the integrated circuitdevice of FIG. 1 in accordance with some embodiments. Referring to FIG.3, in some embodiments, the integrated circuit device 100 includes asubstrate 102, and the image sensing pixels 110 and the focus detectionpixel pair 120 are disposed in the substrate 102. In some embodiments,the integrated circuit device 100 includes a backside illuminated (BSI)image sensor device. The integrated circuit device 100 may be anintegrated circuit (IC) chip, system on chip (SoC), or portion thereof,that includes various passive and active microelectronic components,such as resistors, capacitors, inductors, diodes,metal-oxide-semiconductor field effect transistors (MOSFET),complementary MOS (CMOS) transistors, bipolar junction transistors(BJT), laterally diffused MOS (LDMOS) transistors, high power MOStransistors, fin-like field effect transistors (FinFET), other suitablecomponents, or combinations thereof. FIG. 3 has been simplified for thesake of clarity to better understand the inventive concepts of thepresent disclosure. Additional features can be added in the integratedcircuit device 100, and some of the features described below can bereplaced or eliminated for other embodiments of the integrated circuitdevice 100.

In some embodiments, the substrate 102 has a front surface 104 and aback surface 106. In some embodiments, the substrate 102 is asemiconductor substrate including silicon. In alternative embodiments,the substrate 102 may include another elementary semiconductor, such asgermanium and/or carbon; a compound semiconductor including siliconcarbide, gallium arsenic, gallium phosphide, indium phosphide, indiumarsenide, and/or indium antimonide; an alloy semiconductor includingSiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; orcombinations thereof. The substrate 102 may be a semiconductor oninsulator (SOI). The substrate 102 may include a doped epitaxial layer,a gradient semiconductor layer, and/or a semiconductor layer overlyinganother semiconductor layer of a different type, such as a silicon layeron a silicon germanium layer.

In some embodiments, the substrate 102 may be a p-type or an n-typesubstrate depending on design requirements of the integrated circuitdevice 100. In some examples, the integrated circuit device 100 mayinclude a p-type doped substrate, and p-type substrate is, for example,doped with include boron, gallium, indium, other suitable p-typedopants, or combinations thereof. In alternative embodiments, theintegrated circuit device 100 may include an n-type doped substrate,n-type substrate is, for example, doped with phosphorus, arsenic, othersuitable n-type dopants, or combinations thereof. In some embodiments,the substrate 102 may include various doped regions, such as p-typedoped regions and/or n-type doped regions configured and coupled to formvarious elements and functional features. All doping features may beachieved using a suitable process, such as ion implantation in varioussteps and techniques.

In some embodiments, the substrate 102 may include isolation structures108. In some embodiments, the isolation structures 108 define aplurality of active regions 102 a and non-active regions 102 btherebetween. In some embodiments, the active regions 102 a have, forexample, the same size. The non-active regions 102 b have, for example,the same size. In alternative embodiments, at least one of the activeregions 102 a and the non-active regions 102 b has a size different fromthat of the others. The isolation structures 108 are, for example, localoxidation of silicon (LOCOS) and/or shallow trench isolation (STI), toseparate (or isolate) various regions and/or elements formed over orwithin substrate 102. The isolation structures 108 may include siliconoxide, silicon nitride, silicon oxynitride, other suitable materials, orcombinations thereof. The isolation structures 108 can be formed by anysuitable process. For example, forming an STI includes aphotolithography process, etching a trench in the substrate 102 (forexample, by using a dry etching and/or wet etching), and filling thetrench (for example, by using a chemical vapor deposition process) withdielectric material. The filled trench may have a multi-layer structure,such as a thermal oxide liner layer filled with silicon nitride orsilicon oxide. In some embodiments, the substrate 102 may include dopedregions 109 formed aside the isolation structure 108. The doped regions109 are doped regions having n-type and/or p-type dopants formed in thesubstrate 102. In some embodiments, the doped regions 109 are p-typedoped regions. The doped regions 109 may be formed by a method such asdiffusion and/or ion implantation.

In some embodiments, the image sensing pixel 110, the firstphotosensitive unit 124, and the second photosensitive unit 130 arerespectively disposed in the active regions 102 a. In some embodiments,the first photo-insensitive unit 126 and the second photo-insensitiveunit 132 are respectively disposed in the non-active regions 102 b. Insome embodiments, the first photo-insensitive unit 126 and the secondphoto-insensitive unit 132 are, for example, adjacent to each other. Inalternative embodiments, the first photosensitive unit 124, and thesecond photosensitive unit 130 may be adjacent to each other. The imagesensing pixel 110 and the first and second photosensitive units 124 and130 of the focus detection pixel pair 120 may include photodetectors,such as photodiodes. In some embodiments, the image sensing pixel 110and the first and second photosensitive units 124 and 130 of the focusdetection pixel pair 120 may include light sensing regions (orphoto-sensing region) LSR, which detect intensity (brightness) of anincident light, respectively. In one embodiment, the incident light is avisual light. Alternatively, the incident light could be infrared (IR),ultraviolet (UV), X-ray, microwave, other suitable radiation type, orcombinations thereof. In some embodiments, the image sensing pixels 110and the focus detection pixel pair 120 are configured to correspond witha specific light wavelength, such as a red (R), a green (G), or a blue(B) light wavelength. The light sensing regions (or photo-sensingregions) LSR are doped regions having n-type and/or p-type dopantsformed in the substrate 102. In some embodiments, the light sensingregions LSR may be n-type doped regions. The light sensing regions LSRmay be formed by a method such as diffusion and/or ion implantation. Insome embodiments, at least one of the image sensing pixel 110 and thefirst and second photosensitive units 124 and 130 of the focus detectionpixel pair 120 may include a floating diffusion region FD. The floatingdiffusion region FD may be formed by a method such as diffusion and/orion implantation. In alternative embodiments, the image sensing pixel110 and the first and second photosensitive units 124 and 130 of thefocus detection pixel pair 120 may further include one or more pinnedlayers. For example, the light sensing regions LSR may include a pinnedlayer (not shown) disposed in the substrate 102 at the front surface 104and/or at the back surface 106. In alternative embodiments, the imagesensing pixel 110 and the first and second photosensitive units 124 and130 of the focus detection pixel pair 120 may be disposed between thepinned layers disposed respectively at the front and back surfaces 104and 106 of the substrate 102. The pinned layers are doped layers, whichmay be doped n-type or p-type depending on design requirements of theimage sensing pixel 110 and the first and second photosensitive units124 and 130 of the focus detection pixel pair 120.

The substrate 102 may also include additional layers, such as oxides,dielectrics, polysilicon, metal, and so forth, formed over or near thefront surface 104.

In some embodiments, at least one of the first photo-insensitive unit126 and the second photo-insensitive unit 132 is a doped region DRhaving the same conductivity as the substrate 102. The doped region DRis a doped region having n-type and/or p-type dopants formed in thesubstrate 102. In some embodiments, the doped region DR is a p-typedoped region. The doped region DR may be formed by a method such asdiffusion and/or ion implantation. In some embodiments, the doped regionDR is, for example, formed simultaneously with the doped regions 109aside the isolation structures 108.

In some embodiments, the image sensing pixel 110 and the first andsecond photosensitive units 124 and 130 of the focus detection pixelpair 120 may further include various transistors T in aninter-dielectric layer IDL, such as a transfer transistor, a resettransistor, a source-follower transistor, a select transistor, othersuitable transistors, or combinations thereof. The light sensing regionsLSR and various transistors T (which can collectively be referred to aspixel circuitry) may allow the image sensing pixel 110 and the first andsecond photosensitive units 124 and 130 of the focus detection pixelpair 120 to detect intensity of the particular light wavelength.Additional circuitry, input, and/or outputs may be provided to the imagesensing pixel 110 and the first and second photosensitive units 124 and130 of the focus detection pixel pair 120 to provide an operationenvironment for the image sensing pixel 110 and the first and secondphotosensitive units 124 and 130 of the focus detection pixel pair 120and/or support communication with the image sensing pixel 110 and thefirst and second photosensitive units 124 and 130 of the focus detectionpixel pair 120. In alternative embodiments, a dummy gate may be disposedover at least one of the first photo-insensitive unit 126 and the secondphoto-insensitive unit 132.

In some embodiments, the integrated circuit device 100 further includesvarious conductive features 142 disposed over the front surface 104 ofthe substrate 102. In some embodiments, various conductive features 142in a dielectric layer 144 are coupled to various components of the BSIimage sensor device, such as the image sensing pixel 110 and the firstand second photosensitive units 124 and 130 of the focus detection pixelpair 120, such that the various components of the image sensing deviceare operable to properly respond to illuminated light (imagingradiation). The various conductive features 142 may be verticalinterconnects, such as contacts and/or vias, and/or horizontalinterconnects, such as lines. The various conductive features 142 mayinclude conductive materials, such as metal. In an example, metalsincluding aluminum, aluminum/silicon/copper alloy, titanium, titaniumnitride, tungsten, polysilicon, metal silicide, or combinations thereof,may be used, and the various conductive features 142 may be referred toas aluminum interconnects. The various conductive features 142 may beformed by a process including physical vapor deposition (PVD), chemicalvapor deposition (CVD), or combinations thereof. Other manufacturingtechniques to form various conductive features 142 may includephotolithography processing and etching to pattern conductive materialsto form the vertical and horizontal interconnects. The metal silicideused in the multilayer interconnects may include nickel silicide, cobaltsilicide, tungsten silicide, tantalum silicide, titanium silicide,platinum silicide, erbium silicide, palladium silicide, or combinationsthereof. Alternatively, the various conductive features 142 may becopper multilayer interconnects, which include copper, copper alloy,titanium, titanium nitride, tantalum, tantalum nitride, tungsten,polysilicon, metal silicide, or combinations thereof. It is understoodthat conductive features 142 are not limited by the number, material,size, and/or dimension depicted, and thus, the conductive features 142may include any number, material, size, and/or dimension of conductivefeatures depending on design requirements of the integrated circuitdevice 100.

In some embodiments, the color filters 150 are disposed over the backsurface 106 of the substrate 102. The color filter 150 is, for example,a red color filter, a green color filter or a blue color filter. Thecolor filters 150 are designed so that each may filter through light ofa predetermined wavelength. For example, the red color filter alignedwith a red light sensing region may be configured to filter throughvisible light of a red wavelength to light sensing region, the greencolor filter aligned with a green light sensing region may be configuredto filter through visible light of a green wavelength to light sensingregion, or the blue color filter aligned with a blue light sensingregion may be configured to filter through visible light of a bluewavelength to light sensing region. In some embodiments, a dielectriclayer or antireflective layer (not shown) is disposed over the backsurface 106 of the substrate 102 and between the color filter 150 andthe substrate 102.

The above embodiments illustrate an example at least one of the firstphoto-insensitive unit and the second photo-insensitive unit is a dopedregion. However, the disclosure is not limited thereto. FIG. 4 is aschematic view showing an integrated circuit device in accordance withsome embodiments. In some embodiments, at least one of the firstphoto-insensitive unit 126 and the second photo-insensitive unit 132 maybe an insulating feature IF. In some embodiments, the insulating featureIF is, for example, at least one STI structure. In some embodiments, theinsulating feature IF is, for example, integrally formed with theadjacent isolation structures 108 defining the non-active region 102 b,wherein original outlines of the isolation structures 108 defining thenon-active 102 b are represented by a dashed line. In some embodiments,the insulating feature IF of at least one of the first photo-insensitiveunit 126 and the second photo-insensitive unit 132 is formedsimultaneously with the isolation structures 108. In some embodiments, adoped region 109′ is further aside the insulating feature IF of at leastone of the first photo-insensitive unit 126 and the secondphoto-insensitive unit 132. The material and forming method of theinsulating feature IF and the doped region 109′ may be the same as theisolation structures 108 and the doped region 109, detail of which isdescribed above, and thus it is omitted here. In some embodiments, atleast one of the first photo-insensitive unit 126 and the secondphoto-insensitive unit 132 may be constituted with the insulatingfeature IF and the doped region 109′ aside the insulating feature IF. Inalternative embodiments, at least one of the first photo-insensitiveunit 126 and the second photo-insensitive unit 132 may be constitutedwith the insulating feature IF. In some embodiments, the first andsecond photosensitive units 124 and 130 of the focus detection pixelpair 120 are configured to detect an intensity of radiation, and thefirst photo-insensitive unit 126 and the second photo-insensitive unit132 are ineffective in sensing the incident light. Therefore, theintegrated circuit device 100 may detect phase difference.

FIG. 5 is a schematic view showing an integrated circuit device inaccordance with some embodiments. In some embodiments, at least one ofthe first photo-insensitive unit 126 and the second photo-insensitiveunit 132 is a portion UD of the substrate 102 disposed between theisolation structures 108 without additional doping. In some embodiments,the non-active region 102 b of the substrate 102 may be shielded by amask while forming other components in the active region 102 a of thesubstrate 102, and thus the non-active region 102 b of the substrate 102is prevented from additional doping. In some embodiments, the first andsecond photosensitive units 124 and 130 of the focus detection pixelpair 120 are configured to detect an intensity of radiation, and thefirst photo-insensitive unit 126 and the second photo-insensitive unit132 are ineffective in sensing the incident light. Therefore, theintegrated circuit device 100 may detect phase difference.

It is noted that although the first photo-insensitive unit 126 and thesecond photo-insensitive unit 132 in the above embodiments are, forexample, the same, the first photo-insensitive unit 126 and the secondphoto-insensitive unit 132 may be different in alternative embodiments.

In some embodiments, the integrated circuit has the image sensing pixelsand the focus detection pixel pair including the first and second focusdetection pixels. The first focus detection pixel includes the firstphotosensitive unit at the first side and the first photo-insensitiveunit at the second side, the second focus detection pixel includes thesecond photosensitive unit at the second side and the secondphoto-insensitive unit at the first side, and the first side and thesecond side are disposed opposite to each other with respect to theoptical axis of the lens. The light beam passing through the lens overthe first focus detection pixel is simultaneously incident into thefirst photosensitive and photo-insensitive units without being blocked,and the light beam passing through the lens over the second focusdetection pixel is simultaneously incident into the secondphotosensitive and photo-insensitive units without being blocked.Accordingly, the focus detection pixel pair detects the firstside-looking information by the first photosensitive unit and the secondside-looking information by the second photosensitive unit to catch afocus position, and thus the focus detection pixel pair performs phasedifference autofocus.

In some embodiments, at least one of the first and second photosensitiveunits may have the light sensing region, which may be formedsimultaneously with the light sensing region of the image sensing pixel.At least one of the first and second photo-insensitive units may be theinsulating feature, the doped region having the same conductivity as thesubstrate, or a portion of the substrate without additional doping.Thus, at least one of the first and second photo-insensitive units maybe formed simultaneously with the isolation features or the doped regionaside the isolation features, or formed by keeping a portion of thesubstrate without additional doping. Particularly, in some embodiments,a size of each of the first and second photosensitive units may be aboutequal to a size of the image sensing pixel, and thus the first andsecond photosensitive units may be formed by the manufacturing processesfor the image sensing pixel. Accordingly, the integrated circuit mayhave lower cost and simplified process.

An integrated circuit device includes a focus detection pixel and alens. The focus detection pixel includes a photosensitive unit and aphoto-insensitive unit in a substrate. The lens is disposed over thefocus detection pixel, wherein the photosensitive unit and thephoto-insensitive unit are disposed opposite to each other with respectto an optical axis of the lens, and a light beam passing through thelens is simultaneously incident into the photosensitive unit and thephoto-insensitive unit.

An integrated circuit device includes a plurality of image sensingpixels, a focus detection pixel pair and lenses. The focus detectionpixel pair is disposed among the image sensing pixels and includes afirst focus detection pixel and a second focus detection pixel. Thefirst focus detection pixel includes a first photosensitive unit at afirst side and a first photo-insensitive unit at a second side, and thesecond focus detection pixel includes a second photosensitive unit atthe second side and a second photo-insensitive unit at the first side.The lenses are respectively disposed over the image sensing pixels, thefirst focus detection pixel and the second focus detection pixel. Thefirst side and the second side are opposite to each other with respectto an optical axis of the lens, a light beam passing through the lensover the first focus detection pixel is simultaneously incident into thefirst photosensitive and photo-insensitive units, and a light beampassing through the lens over the second focus detection pixel issimultaneously incident into the second photosensitive andphoto-insensitive units.

An integrated circuit device includes a plurality of image sensingpixels, a focus detection pixel pair and lenses. The focus detectionpixel pair includes a first focus detection pixel and a second focusdetection pixel. The first focus detection pixel includes a firstphotosensitive unit and a first photo-insensitive unit, the second focusdetection pixel includes a second photosensitive unit and a secondphoto-insensitive unit. The lenses are respectively disposed over theimage sensing pixels, the first focus detection pixel and the secondfocus detection pixel. A size of the lens over the first focus detectionpixel and a size of the lens over the second focus detection pixel arerespectively larger than a size of the lens over the image sensingpixel.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and features for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. An integrated circuit device, comprising: a focus detection pixel,comprising a photosensitive unit and a photo-insensitive unit in asubstrate; and a lens, disposed over the focus detection pixel, whereinthe photosensitive unit and the photo-insensitive unit are disposedopposite to each other with respect to an optical axis of the lens, anda light beam passing through the lens is simultaneously incident intothe photosensitive unit and the photo-insensitive unit.
 2. Theintegrated circuit device according to claim 1, wherein a size of thephotosensitive unit is about equal to a size of the photo-insensitiveunit.
 3. The integrated circuit device according to claim 1, furthercomprising a plurality of isolation structures in the substrate, whereinthe photosensitive unit and the photo-insensitive unit are respectivelydisposed between the isolation structures.
 4. The integrated circuitdevice according to claim 1, wherein the photo-insensitive unit is aninsulating feature.
 5. The integrated circuit device according to claim1, wherein the photo-insensitive unit is a doped region having the sameconductivity type as the substrate.
 6. The integrated circuit deviceaccording to claim 1, wherein the photo-insensitive unit is a portion ofthe substrate without additional doping.
 7. The integrated circuitdevice according to claim 1, further includes a color filter disposedbetween the focus detection pixel and the lens.
 8. An integrated circuitdevice, comprising: a plurality of image sensing pixels; a focusdetection pixel pair, disposed among the image sensing pixels andcomprising a first focus detection pixel and a second focus detectionpixel, wherein the first focus detection pixel comprises a firstphotosensitive unit at a first side and a first photo-insensitive unitat a second side, and the second focus detection pixel comprises asecond photosensitive unit at the second side and a secondphoto-insensitive unit at the first side; and lenses, respectivelydisposed over the image sensing pixels, the first focus detection pixeland the second focus detection pixel, wherein the first side and thesecond side are opposite to each other with respect to an optical axisof the lens, a light beam passing through the lens over the first focusdetection pixel is simultaneously incident into the first photosensitiveand photo-insensitive units, and a light beam passing through the lensover the second focus detection pixel is simultaneously incident intothe second photosensitive and photo-insensitive units.
 9. The integratedcircuit device according to claim 8, wherein at least one of a size ofthe first photosensitive unit, the first photo-insensitive unit, thesecond photosensitive unit, and the second photo-insensitive unit isabout equal to a size of the image sensing pixel.
 10. The integratedcircuit device according to claim 8, wherein a size of the lens over atleast one of the first focus detection pixel and the second focusdetection pixel is about equal to a size of the lens over the imagesensing pixel.
 11. The integrated circuit device according to claim 8,wherein a size of the lens over at least one of the first focusdetection pixel and the second focus detection pixel is larger than asize of the lens over the image sensing pixel.
 12. The integratedcircuit device according to claim 8, wherein a size of the firstphotosensitive unit is about equal to a size of the firstphoto-insensitive unit.
 13. The integrated circuit device according toclaim 8, wherein a size of the second photosensitive unit is about equalto a size of the second photo-insensitive unit.
 14. The integratedcircuit device according to claim 8, wherein one of the first side andthe second side is a right side, and the other of the first side and thesecond side is a left side.
 15. The integrated circuit device accordingto claim 8, further includes color filters disposed between the imagesensing pixels and the lens, the first focus detection pixel and thelens, and the second focus detection pixel and the lens.
 16. Theintegrated circuit device according to claim 8, wherein the first focusdetection pixel and the second focus detection pixel are disposedadjacent to each other.
 17. An integrated circuit device, comprising: aplurality of image sensing pixels; a focus detection pixel pair,comprising a first focus detection pixel and a second focus detectionpixel, wherein the first focus detection pixel comprises a firstphotosensitive unit and a first photo-insensitive unit, and the secondfocus detection pixel comprises a second photosensitive unit and asecond photo-insensitive unit; and lenses, respectively disposed overthe image sensing pixels, the first focus detection pixel and the secondfocus detection pixel, wherein a size of the lens over the first focusdetection pixel and a size of the lens over the second focus detectionpixel are respectively larger than a size of the lens over the imagesensing pixel.
 18. The integrated circuit device according to claim 17,wherein a size of the lens over the first focus detection pixel and asize of the lens over the second focus detection pixel are respectivelyabout two times a size of the lens over the image sensing pixel.
 19. Theintegrated circuit device according to claim 17, wherein a size of eachof the first photosensitive unit, the first photo-insensitive unit, thesecond photosensitive unit, and the second photo-insensitive unit isabout equal to a size of the image sensing pixel.
 20. The integratedcircuit device according to claim 17, wherein a light beam passingthrough the lens over the first focus detection pixel is simultaneouslyincident into the first photosensitive and photo-insensitive units, anda light beam passing through the lens over the second focus detectionpixel is simultaneously incident into the second photosensitive andphoto-insensitive units.